NTD4302 دیتاشیت

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مشاهده دیتاشیت NTD4302	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTD4302T4G
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 1.04W;75W
Total Gate Charge (Qg@Vgs): 80nC@10V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 2400pF@24V
Continuous Drain Current (Id): 8.4A;68A
Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@10V,20A
Package: TO-252
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 24V
FET Feature: -
Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number: NTD43
detail: N-Channel 30V 8.4A (Ta), 68A (Tc) 1.04W (Ta), 75W (Tc) Surface Mount DPAK